Walden - Current Students - NTU - Course Desc - NEEI

Inside.Waldenu.Edu>Degree Program Resources>NTU Course Schedule>Current Students - NTU - Course Desc - NEEI - 6301

NEEI-6301 Integrated Circuit Devices (IC 520)

Contributing Scholar - Sanjay Banerjee, University of Texas at Austin

3 Semester Credit Hours

Course Description

This course utilizes the essentials of semiconductor physics, including band diagrams, electrons and holes, density of states, Fermi statistics, carrier drift and diffusion, to explore common semiconductor devices. PN junction diodes, metal-semiconductor junctions, MOS transistors, bipolar transistors, optoelectronic devices, and memory devices are explored. Functional behavior, underlying physics, and electrical characteristics such as current-voltage and capacitance-voltage behaviors will be addressed for each device.

Prerequisites

One year of college level calculus.
A course in linear algebra and differential equations.
A course in basic electromagnetic theory.
General prerequisite: Students must have the knowledge resulting from completing all coursework in the curriculum for a BS degree in Electrical Engineering from an ABET-accredited engineering program in the United States or a CEAB-accredited program in Canada, or the equivalent from a foreign institution; performance level in this coursework should be equivalent to a cumulative undergraduate GPA of 2.9 or better on 4.0 scale.

Course Objectives

Discuss semiconductor physics concepts including bandstructure, drift-diffusion transport, doping, and effective mass of electrons and holes
Discuss pn junction current-voltage and capacitance-voltage behavior
Discuss metal-oxide-semiconductor (MOS) capacitance-voltage characteristics, MOSFET current-voltage behavior, short channel effects and applications
Discuss bipolar device physics including emitter injection efficiency, base transport factor, and Ebers Moll models
Discuss sub-micron device considerations
Provide an overview of optoelectronic devices including photodetectors, light emitting diodes, and CCDs.
Provide an overview of memory devices including RAM, ROM, flash, and novel technologies

Course Topics

The following topics will be covered in the order given.

Energy bands
Charge carriers
Carrier concentrations
Carrier diffusion
Carrier drift
Optical absorption; luminescence
Generation-recombination
P-N junction in equilibrium
Current flow at a junction
Reverse bias P-N junction
Forward bias P-N junction
Transient and AC conditions
Deviations from the simple theory
Metal-semiconductor and heterojunctions
JFETs and MESFETs

MOS capacitor
MOS C-V behavior
MOSFET
MOS transistor I-V
Sub-micron effects
Introduction to bipolar transistors
Terminal currents; generalized biasing
Secondary effects
Photodiodes and LEDs
Solar cells
ROM
RAM
Flash memory
Novel memory technologies

Technical Requirements

There are no additional software or application requirements for this course. You will be required to have Windows Media Player to view the lectures. For the standard technical requirements, please go to the link below: http://www.waldenu.edu/c/Files/DocsGeneral/Getting_Started_Guide.pdf

Textbook

Required: Solid State Electronic Devices, Ben G. Streetman and Sanjay Kumar Banerjee, Prentice Hall, 6th edition, ISBN 0-13-149726-X, 2006.

Disclaimer: The coure syllabus may differ slightly from this course. Descriptions will be provided in your online course. Textbook information is provided only to give more information about the course. Do Not use this information to purchase a textbook. Up-to-date information will be provided when you register.