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NEEI -6302 Solid State Devices (IC 724)

 



Instructor -  Vivek Subramanian, University of California, Berkeley

 

4 Semester Credit Hours

 

Course Description

 

This course will build a strong theoretical foundation as well as an intuitive understanding of the most important behaviors of MOSFETs. Topics are chosen to highlight the limitations and promises of aggressively scaled MOSFETs and many examples are taken from the critical issues facing the semiconductor industry.  Content of the course will emphasize the physical principles and operational characteristics of semiconductor devices; modeling for circuit design, high-field and hot carrier effects. There is advanced discussion of field-effect transistors with an emphasis on the behavior dictated by present and probable future technologies. The course is suitable for junior as well as experienced engineers.

 

Prerequisites

 

An undergraduate course on semiconductor devices that includes the MOS field-effect transistors, basic understanding of the device fabrication technology and the use of MOSFET's in integrated circuits. A 20-hour short course on MOS device and technology that may be offered by some companies would also be adequate.

 

Objectives

 

This course will help the students acquire a deep understanding of MOSFET, which is the most important device for integrated circuits. This is likely the most advanced course on this topic that students will encounter. It should prepare students for research or development of device technology or digital or analog circuits for many years to come.

 

Course Topics

 

  • Advanced theory of MOS capacitor
  • Characterization of MOS interface
  • MOSFET IV characteristics and models
  • Short channel MOSFET model
  • Inversion layer mobility and velocity saturation
  • Isolation technology (reading)
  • Subthreshold leakage
  • Short-channel effect
  • Device model for analog and digital design
  • Silicon-On-Insulator
  • Hot electron effects
  • CMOS well technology (reading)
  • Thin gate oxide reliability

 

Textbooks

 

Required: Silicon Processing for the VLSI Era., Vol. 3: The Submicron Mosfet, Stanley Wolf, Lattice Publishing, 1995; Device Electronics for Integrated Circuits, Richard S. Muller, Thedodore I. Kamins, Mansun Chan, John Wiley and Sons, 3rd ed, 2003, ISBN 0-471-59398-2; Optional: Fundamentals of Modern VLSI Devices, Y. Taur, T. Ning, Cambridge University Press, 1998, ISBN 0-521-55959-6.

 

Disclaimer: Textbook information is provided only to give more information about the course.  Do Not use this information to purchase a textbook.  Up-to-date information will be provided when you register.



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