Contributing Scholar - Franco Cerrina, University of Wisconsin-Madison

3 Semester Credit Hours

Course Description

Introduction to the bipolar and MOSFET semiconductor process. Theory and practice of the major unit processes used in modern silicon device processing, for example: oxidation; diffusion; ion implantation; Deep-UV, phase-shift, UV, electron and X-ray lithography; metal and oxide deposition; aqueous, plasma and reactive ion etching; chemical mechanical polishing; and wet-cleaning for front-end- and back-end-of-the-line. Issues relating to performance integration; how subsequent and prior process steps affect a fabrication sequence; limiting process steps in producing devices for the Gigabit era.

Prerequisites

• One year of college-level calculus
• A course in linear algebra and differential equations
• An introductory course in electrical and electronic circuits
• General prerequisite: Students must have the knowledge resulting from appropriate prerequisite coursework in the curriculum for a BS degree in Computer Engineering from an ABET-accredited engineering program in the United States or a CEAB-accredited program in Canada, or the equivalent from a foreign institution; performance level in this coursework should be equivalent to a cumulative undergraduate GPA of 2.9 or better on 4.0 scale.

Course Objectives

Explain the process sequence for BJT, MOSFET and CMOS devices; explain the crystal structure of silicon wafers; understand the theory of oxidation, diffusion, and ion implantation systems; calculate process schedules from required layer thicknesses, impurity profiles and other conditions, or vice-versa; understanding the theory of optical, X-ray and E-beam lithography; understand the theory of wet cleaning and chemical mechanical polishing; understand the theory of wet etching, plasma etching and reactive ion etching; understand the theory of sputtering chemical vapor deposition, low pressure chemical vapor deposition, metallorganic chemical vapor deposition and plasma enhanced chemical vapor deposition; understand the key issues in process integration and in the limits of submicron device manufacture.

Course Topics

The following topics will be covered in the order given

• Introduction
• Process technologies
• Silicon: structure and properties
• Unit process steps
• Advanced processing issues